W4TXE0X-0D00 SCHEDA,CIRCUITO,LA FUNZIONE

W4TXE0X-0D00 Datasheet PDF

Costruttore	Imballaggio	Descrizione	PDF	Temperatura
Cree		Diameter 76.2mm; lsemi-insulating (prototype); silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition	W4TXE0X-0D00 PDF	Min.°C \| Max°C

Cree W4TXE0X-0D00
Diameter 76.2mm; lsemi-insulating (prototype); silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition