K4E160412D-F SCHEDA,CIRCUITO,LA FUNZIONE

K4E160412D-F Datasheet PDF

Costruttore	Imballaggio	Descrizione	PDF	Temperatura
Samsung	TSOP-II	4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle.	K4E160412D-F PDF	Min.°C \| Max°C

Samsung semiconductor K4E160411D
4Bit CMOS Dynamic with Extended Data
Samsung K4E160411D-B
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle.
Samsung K4E160411D-F
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle.
Samsung semiconductor K4E160412D
4Bit CMOS Dynamic with Extended Data
Samsung K4E160412D-B
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle.
Samsung K4E160412D-F
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle.